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G4PC50F 600V 50A IGBT
G4PC50F 600V 50A IGBT
TOMSON ELECTRONICS

G4PC50F 600V 50A IGBT

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Product SKU: TRN-02180
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₹ 215.00 (Incl.Tax)
 
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  • Description
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The G4PC50F IGBT is a cutting-edge Insulated Gate Bipolar Transistor engineered for high-power applications. With a voltage rating of 600V and advanced switching capabilities, it maximizes efficiency in motor drives, inverters, and renewable energy systems. Built for reliability and precision, it ensures optimal performance in demanding industrial environments.

Features

  • Optimized for medium operating
  • Frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
  • Industry standard TO-247AD package
  • Lead-Free

Specifications

    Description

Value

Collector-to-Emitter Breakdown Voltage VCES

600 V

Continuous Collector Current IC @ TC = 25°C

70 A

Continuous Collector Current IC @ TC = 100°C

S9 A

Pulsed Collector Current ICM

280 A

Clamped Inductive Load Current ILM

280 A

Gate-to-Emitter Voltage VGE

± 20 V

Reverse Voltage Avalanche Energy EARV

20 mJ

Maximum Power Dissipation PD @ TC = 25°C

200 W

Maximum Power Dissipation PD @ TC = 100°C

78 W

  Operating Junction TJ  and

Storage Temperature Range TSTG

-55 to + 150°C

Soldering Temperature, for 10 seconds

300°C (0.06S in. (1.6mm from case )

Mounting torque, 6-S2 or MS screw.

10 lbf•in (1.1N•m)

 

Click here for more information - DATASHEET

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