IRF 9Z24N 55V 12A <0.175E P - MOSFET

Description

Value

Continuous Drain Current, V_GS @ -10V

I_D @ T_C = 25°C

-12 A

Continuous Drain Current, V_GS @ -10V

I_D @ T_C = 100°C

-8.5 A

Pulsed Drain Current IDM

-48 A

Power Dissipation PD @TC = 25°C

45 W

Linear Derating Factor

0.30 W/°C

Gate-to-Source Voltage VGS

± 20 V

Single Pulse Avalanche Energy EAS

96 mJ

Avalanche Current IAR

-7.2 A

Repetitive Avalanche Energy EAR

4.5 mJ

Peak Diode Recovery dv/dt

-5.0 V/ns

Operating Junction T_J and Storage Temperature Range TSTG

-55 to + 175°C

Soldering Temperature, for 10 seconds

300°C (1.6mm from case )

Mounting torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

Static Drain-to-Source On-Resistance RDS(on)

V_GS = -10V, I_D = -7.2A

0.175W