IRF 740 400V 10A <0.55E N - MOSFET

Description

Value

Drain-source voltage VDS

400 V

Gate-source voltage VGS

± 20 V

Continuous drain current I_D

V_GS at 10 V

T_C = 25 °C

10 A

T_C = 100 °C

6.3 A

Pulsed drain current IDM

40 A

Linear derating factor

1.0 W/°C

Single pulse avalanche energy EAS

520 mJ

Repetitive avalanche current IAR

10 A

Repetitive avalanche energy  EAR

13 mJ

Maximum power dissipation P_D

T_C = 25 °C

125 W

Peak diode recovery dV/dt

4.0 V/ns

Operating junction and storage temperature range TJ, Tstg

-55 to +150 °C

Soldering recommendations (peak temperature)

For 10 s

300 °C

   Drain-source on-state resistance RDS(on)

V_GS =  10 V

 I_D = 6.0 A b

0.55 A

Mounting torque

6-32 or M3 screw

10 lbf · in

1.1 N · m