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G4PH40UD 1200V 41A IGBT
G4PH40UD 1200V 41A IGBT
TOMSON ELECTRONICS

G4PH40UD 1200V 40A IGBT

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Product SKU: TRN-02183
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  • Description
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The G4PH40UD IGBT is a next-generation semiconductor powerhouse engineered for high-power applications. This device enhances power efficiency in motor drives, inverters, and industrial systems with its 1200V voltage rating and advanced switching capabilities. Built for reliability and precision, it ensures seamless performance even in the most demanding environments.

Features:

  • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
  • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
  • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
  • Industry standard TO-247AC package

Specifications:

Description

Value

Collector-to-Emitter Breakdown Voltage VCES

1200 V

Continuous Collector Current IC @ TC = 25°C

41 A

Continuous Collector Current IC @ TC = 100°C

21 A

Pulsed Collector Current ICM

82 A

Clamped Inductive Load Current ILM

82 A

Diode Continuous Forward Current IF @ TC = 100°C

8.0 A

Diode Maximum Forward Current IFM

130 A

Gate-to-Emitter Voltage VGE

± 20 V

Maximum Power Dissipation PD @ TC = 25°C

160 W

Maximum Power Dissipation PD @ TC = 100°C

65 W

 Operating Junction TJ and Storage Temperature Range TSTG

-55 to + 150°C

Soldering Temperature, for 10 seconds

300°C (0.063 in. (1.6mm) from case )

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

 

 

Click here for more information - DATASHEET

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