BT169 400V 0.5A THYRISTOR

Description

Value

Repetitive Peak Off-State Voltages (VDRM,VRRM)

BT169B

200 V

BT169D

400 V

BT169E

500 V

BT169G

600 V

BT169H

800 V

Peak Gate Voltage (VGM)

5 V

Peak Reverse Gate Voltage (VRGM)

5 V

Peak Gate Current (IGM)

1 A

Average On-State Current (IT(AV))(Half Sine Wave, TLEAD≦83°C)

0.5 A

RMS On-State Current (All Conduction Angles) (IT(RMS))

0.8 A

Non-Repetitive Peak On-State Current (ITSM) (Half Sine Wave, TJ=25°C Prior to Surge)

t=10ms

8 A

t=8.3ms

9 A

Repetitive Rate of Rise of On-State Current After

Triggering (ITM=2A,IG=10mA, dIG/dt=100mA/ms)( dIT/dt)

50 A/ms

Peak Gate Power(PGM`)

2 W

Average Gate Power (Over any 20 ms period)( PG(AV))

0.1 W

Junction Temperature (TJ)

+125°C

Storage Temperature (TSTG)

-40 ~ +150°C