22 N 60 600V 44A IGBT

The 22N60 IGBT is an effective semiconductor device intended for high-performance applications. With a voltage rating of 600V, this insulated gate bipolar transistor provides improved performance and dependability in power electronics circuits. It is ideal for motor drives, inverters, and business management structures, providing simple operation and green strength control.

Features:

• VCE(SAT) ≤ 2.5V @ IC=22A, VGE=15V
• 600V Switching SOA Capability
• High switching speed
• High input impedance
• Low conduction loss

Specifications

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